1 PIECE PHILLIPS BLF 175 HF/VHF power MOS transistor
QUICK REFERENCE DATA
RF performance at Th = 25°Cin a common source test circuit.
Note
1. 2-tone efficiency.
MODE OF
OPERATION
f
(MHZ)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
d3
(dB)
class-A 28 50 800 8(PEP) >24 − <−40
class-AB 28 50 150 30(PEP) typ. 24 typ. 40(1) typ.−35
CW, class-B 108 50 30 30 typ. 20 typ. 65
CHARACTERISTICS
Tj = 25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage ID = 100 mA;VGS = 0 125 − − V
IDSS drain-source leakage current VGS = 0;VDS = 50 V − − 100 µA
IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 1 µA
VGSth gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 − 4.5 V
∆VGS gate-source voltage difference of
matched pairs
ID = 10 mA; VDS = 10 V − − 100 mV
gfs forward transconductance ID = 1 A;VDS = 10 V 1.1 1.6 − S
RDSon drain-source on-state resistance ID = 1 A;VGS = 10 V − 0.75 1.5 Ω
IDSX on-state drain current VGS = 10 V;VDS = 10 V − 5.5 − A
Cis input capacitance VGS = 0;VDS = 50 V;f = 1 MHz − 130 − pF
Cos output capacitance VGS = 0;VDS = 50 V; f = 1 MHz − 36 − pF
Crs feedback capacitance VGS = 0;VDS = 50 V; f = 1 MHz − 3.7 − p